HRTEM Image Simulations for Gate Oxide Metrology
نویسندگان
چکیده
منابع مشابه
Gate oxide metrology and silicon piezooptics
We describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process metrology in manufacturing of CMOS transistors for the 130 nm node and beyond. Specifically, we describe the difficulties associated with the introduction of silicon-on-insulator (SOI) substrates, alternative gate dielectrics (silicon oxynitride or metal oxides), and strained Si channe...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2000
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927600037892