Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies
نویسندگان
چکیده
Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for development homoepitaxy. We propose new approach grow high-quality homoepitaxial in N2-rich carrier gas and at higher supersaturation as compared heteroepitaxy. develop low-temperature an optimum nucleation scheme based on evolution thermal stability surface under different compositions temperatures. Analysis framework theory simultaneously grown templates SiC hydride phase epitaxy substrates is presented. show that residual strain screw dislocation densities affect subsequent growth leading distinctively morphologies native substrates, respectively. The established comprehensive picture provides guidance designing strategies conditions optimization atomically flat smooth epilayer surfaces root-mean-square roughness value 0.049 nm background carbon 5.3 × 1015 cm–3 has been achieved. It also shown there no generation additional dislocations during growth. Thus, our results demonstrate potential MOCVD technique deliver material
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ژورنال
عنوان ژورنال: Crystal Growth & Design
سال: 2022
ISSN: ['1528-7483', '1528-7505']
DOI: https://doi.org/10.1021/acs.cgd.2c00683