HOT CARRIERS IN REDUCED GEOMETRY SURFACE-CHANNEL CHARGE-COUPLED DEVICES
نویسندگان
چکیده
منابع مشابه
Simulation of hot carriers in semiconductor devices
Two approaches to calculate the population of hot carriers in semiconductor devices are studied in this thesis. Hot carriers are of interest because they have an energy significantly higher than the mean carrier energy and can thus cause device degradation by injection into the oxide and by interface state generation. In the first approach the hydrodynamic model was used to calculate the first ...
متن کاملEvent Pileup in Charge-coupled Devices
The problem of event pileup in single-photonÈcounting CCD cameras (e.g., in the X-ray regime) is discussed, and a solution to the problem is proposed. The resulting pileup equation includes the e†ects of grade migration and presents itself as a nonlinear modiÐcation to the standard integral equation used by forward-folding spectral-Ðtting programs. The e†ectiveness of the model is demonstrated ...
متن کاملRadiation damage in charge-coupled devices.
Due to their high sensitivity and signal-to-noise ratio, charge-coupled devices (CCDs) have been the preferred optical photon detectors of astronomers for several decades. CCDs are flown in space as the main detection instrument on several well-known missions, such as the Hubble Space Telescope, XMM-Newton or the Cassini Probe. Also, CCDs are frequently used in satellite star trackers which pro...
متن کاملInhibition of charge packet broadening in GaAs charge-coupled devices
Computer simulation of charge transport in GaAs resistive-gate charge-coupled devices is reported. The simulation has been performed for 10 /1-m finger spacings, doping concentrations in the range of I X 10_1 X 10 cm -3, effective channel thicknesses 0.1-1.0 ,urn, lateral applied fields 3-10 kV/cm, and charge packet sizes 5%-100% offull bucket capacity. Inhibition of charge packet broadening du...
متن کاملCharge Transfer in Overlapping Gate Charge-Coupled Devices
A detailed numerical simulation of the free charge trsnrfer in overlapped gate charge-coupled devices (CCD) is presented. The transport dynamics are analyzed in terms of thermal diffusion, self-induced fields, and fringing fields under all the relevant electrodes and the interelectrode regions with time-varying gate potentials. The results of the charge trmwfer with clifferent clocking schemes ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Le Journal de Physique Colloques
سال: 1981
ISSN: 0449-1947
DOI: 10.1051/jphyscol:1981721