منابع مشابه
Hole Transport Characteristics in Pure and Doped GaSb
The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the Ga...
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Hematite (α-Fe(2)O(3)) is a promising candidate for photoelectrochemical splitting of water. However, its intrinsically poor conductivity is a major drawback. Doping hematite to make it either p-type or n-type enhances its measured conductivity. We use quantum mechanics to understand how titanium, zirconium, silicon, or germanium n-type doping affects the electron transport mechanism in hematit...
متن کاملFirst-principles assessment of hole transport in pure and Li-doped NiO.
Alloying nickel oxide (NiO) with lithium oxide (Li2O) at high Li concentrations may reduce NiO's band gap and expand its use as a light absorber in photocatalytic and tandem dye-sensitized solar cell technologies. In this work, we evaluate the viability of this alloy as a p-type hole transport material. We use embedded cluster models, along with unrestricted Hartree-Fock and complete active spa...
متن کاملSPIN-DEPENDENT TRANSPORT IN Mn DOPED GaAs AND GaN DIODES
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...
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N. Miller, J. W. Ager III, H. M. Smith III, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmüller, and J. S. Speck Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California—Berkeley, Berkeley, California 94720, USA Department of Electrical a...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1983
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.332640