Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD
نویسندگان
چکیده
منابع مشابه
Highly Ordered Amorphous Silicon-Carbon Alloys Obtained by RF PECVD
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the e ect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments...
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Hole drift mobilities have been measured using photocarrier time-of-l-light for several hydrogenated amorphous silicon-carbon alloy specimens. We find that, as the band gap increases, the hole drift mobility remains essentially constant. The temperature and dispersion properties were broadly consistent with hole multiple trapping in the valence bandtail. In conjunction with previous drift mobil...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2000
ISSN: 0103-9733
DOI: 10.1590/s0103-97332000000300009