Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVD
نویسندگان
چکیده
منابع مشابه
Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD
In this paper we present results on phosphorous-doped c-Si:H by catalytic chemical vapour deposition in a reactor which internal arrangement does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivit...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2001
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(01)01273-1