Higher-indexed Moiré patterns and surface states of MoTe2/graphene heterostructure grown by molecular beam epitaxy

Abstract Stabilization of the 2 H phase MoTe during molecular beam epitaxy (MBE) growth on graphene terminated 6 -SiC(0001) is highly desirable in order to take advantage its promising properties electronic applications. By properly adjusting conditions, direct crystalline has been achieved. In such van der Waals heterostructure, atomically-clean interface between and permits coupling adjacent layers emergence a high variety Moiré patterns. this paper, we investigate single layer -MoTe grown by MBE present scanning tunneling microscopy (STM) investigations combined with density functional theory (DFT) calculations simulations STM images. Our results show that images /graphene heterostructure surprisingly amplify otherwise weak potential modulations leading appearance unique higher-indexed These patterns are unusually rich many Fourier-overtones remarkable different applied bias voltages, revealing complex features heterostructure.