High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the appl...

Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages

Comparative Studies on Double -Doped Al0.3Ga0.7As/InxGa1−xAs/GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN

Shubnikov–de-Haas oscillation is observed in a polarization-doped three-dimensional electron slab in a graded AlxGa1!xN semiconductor layer. The electron slab is generated by the technique of grading the polar semiconductor alloy with spatially changing polarization. Temperature-dependent oscillations allow us to extract an effective mass of m*"0.21m0. The quantum scattering time measured (#q"0...