High-speed switching operation for a SiC CMOS and power module

This paper deals with the high-speed switching operation of a main circuit when using silicon carbide (SiC) complementary metal-oxide semiconductor (CMOS) and power module for drive. When developed SiC CMOS gate buffer, we experimentally achieved turn-on turn-off speeds about -100 80 V/ns at DC bus voltage 600 V load current 20 A. Based on I-V characteristics charge MOSFET, approximate time was calculated.