High-rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition. (2nd Report). Investigation for Higher Deposition Rate.

High Rate Deposition of Hydrogenated Amorphous Silicon Using Microwave Plasma Chemical Vapor Deposition Process

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Silicon carbide films were deposited by radio frequency thermal plasma chemical vapor deposition (CVD) at rates up to several hundred micrometers per hour over a 40-mm diameter substrate. The films were primarily h-phase SiC. Film morphology was characterized by columnar growth terminating in hemispherical surfaces. The average crystallite size as determined by X-ray diffraction line broadening...

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Homoepitaxial Si films have been deposited at a high rate of 200 nm s-1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V-1 s-1. The results suggested that under the MPCVD the deposition precursors forme...

Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition

Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P conce...

Pulsed DC- Plasma Assisted Chemical Vapor Deposition of α-rich Nanostructured Tantalum Film: Synthesis and Characterization

This paper is an attempt to synthesize nanostructured tantalum films on medical grade AISI 316L stainless steel (SS) using pulsed DC plasma assisted chemical vapor deposition (PACVD). The impact of duty cycle (17-33%) and total pressure (3-10 torr) were studied using field emission scanning electron microscopy (FESEM), grazing incidence x-ray diffraction (GIXRD), nuclear reaction analysis (NRA)...