High Performance SOFCs at Temperatures Below 700 °C
نویسندگان
چکیده
منابع مشابه
Wet oxidation of GeSi at 700 “C
About 500-nm-thick films of Ge,-,,6Sic64 and Ge o.28Si0.72 grown epitaxially on ( 100)Si have been oxidized at 700 “C in wet ambient. A uniform Ge,Sit -,O, oxide layer forms with a smooth interface between it and the unoxidized Ge$i, _ X layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electron...
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ژورنال
عنوان ژورنال: ECS Proceedings Volumes
سال: 1999
ISSN: 0161-6374,2576-1579
DOI: 10.1149/199919.0861pv