High-performance SiGe HBTs for next generation BiCMOS technology
نویسندگان
چکیده
منابع مشابه
Reliability and performance scaling of very high speed SiGe HBTs
We discuss the SiGe HBT structural changes required for very high performance. The increase in collector concentration, affecting current density and avalanche current, appears to be the most fundamental concern for reliability. In device design, a narrow emitter and reduced poly–single-crystal interfacial oxide are important elements in minimizing device parameter shifts. From the application ...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2018
ISSN: 0268-1242,1361-6641
DOI: 10.1088/1361-6641/aade64