High growth speed of gallium nitride using ENABLE-MBE

Catalytic growth and characterization of gallium nitride nanowires.

The preparation of high-purity and -quality gallium nitride nanowires is accomplished by a catalytic growth using gallium and ammonium. A series of catalysts and different reaction parameters were applied to systematically optimize and control the vapor-liquid-solid (VLS) growth of the nanowires. The resulting nanowires show predominantly wurtzite phase; they were up to several micrometers in l...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Crystallographic alignment of high-density gallium nitride nanowire arrays.

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a ...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...