High-Gain InAs Avalanche Photodiodes

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the abs...

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

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Gain-Bandwidth Characteristics of Thin Avalanche Photodiodes

The frequency-response characteristics of avalanche photodiodes (APDs) with thin multiplication layers are investigated by means of a recurrence technique that incorporates the history dependence of ionization coefficients. In addition, to characterize the autocorrelation function of the impulse response, new recurrence equations are derived and solved using a parallel computer. The mean freque...

Avalanche Photodiodes in High-Speed Receiver Systems

The avalanche photodiode (APD) is widely used in optical fibre communications (Campbell, 2007) due to its ability to achieve high internal gain at relatively high speeds and low excess noise (Wei et al., 2002), thus improving the system signal-to-noise ratio. Its internal mechanism of gain or avalanche multiplication is a result of successive impact ionisation events. In an optical receiver sys...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes