High Current Density Electrical Breakdown of TiS3Nanoribbon-Based Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material tit...
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2017
ISSN: 1616-301X
DOI: 10.1002/adfm.201605647