Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes

Inter-layer potential for hexagonal boron nitride.

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture wel...

Light emitting diodes reliability review

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.063 ⇑ Corresponding author at: CALCE Center for Adva University of Maryland, College Park, MD 20742, Un 5323; fax: +1 301 314 9269. E-mail address: [email protected] (M. Pecht). The increasing demand for light emitting diodes (LEDs) has been driven by a number of application categories, including display backligh...

History of Gallium-Nitride-Based Light-Emitting Diodes for Illumination

| The history of development for gallium–nitridebased light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, w...

Thermal transport across graphene and single layer hexagonal boron nitride

Laser Micromachining for Gallium Nitride Based Light-Emitting Diodes