Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

III-V materials, such as InGaAs and InP, are highly attractive for high-performance electronics optoelectronics owning to their high carrier mobilities potential bandgap engineering. Integration on silicon substrates, however, is a key requirement enable widespread adoption of these materials. In this work, direct wafer bonding (DWB) materials explored low-temperature enabling technology Si integration. For logic RF electronics, DWB compared competing integration technologies shown exhibit higher device performance due its relatively low process complexity thermal impact (~300 °C). Due the DWB, it also uniquely suitable 3-D integration, i.e., vertical stacking multiple functional layers. in stacks, where they can high-efficiency tunable lasers together with photonics integrated circuits. here selective epitaxy an route InP-on-Si microdisk lasers. Plasmonics well, allowing scaling photonic devices beyond diffraction limit light. The results work show that promising both applications.