Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross...

Hydrogen sensing properties of a metamorphic high electron mobility transistor

transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...

High-temperature threshold characteristics of a symmetrically graded InAlAs/ InxGa1−xAs/GaAs metamorphic high electron mobility transistor

High-temperature threshold characteristics of a symmetrically graded -doped InAlAs/ InxGa1−xAs/GaAs x=0.5→0.65→0.5 metamorphic high electron mobility transistor MHEMT have been investigated. The thermal threshold coefficients, defined as Vth / T, are superiorly low at 0.9 mV/K from 300 to 420 K and at −0.75 mV/K from 420 to 500 K. An interesting polarity change of the thermal threshold coeffici...

MOCVD growth of GaN-based high electron mobility transistor structures

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results