Hetero-structure mode space method for efficient device simulations

The Hamiltonian size reduction method or the mode space applicable to general heterogeneous structures is developed in this work. effectiveness and accuracy of are demonstrated for four example devices GaSb/InAs tunnel field effect transistor (FET), MoTe2/SnS2 bilayer vertical FET, InAs nanowire FET with a defect, Si rough surfaces. reduced around 5 % original full without losing calculated transmission local density states practical sense. work can be used any type applied virtually hetero-structure, so it has potential become an enabling technology efficient simulations hetero-structures.