Hall Current Effect of Magnetic-Optical-Elastic-Thermal-Diffusive Non-Local Semiconductor Model during Electrons-Holes Excitation Processes

This paper investigates a theoretical model for the interaction between electrons and holes (E/H) in elastic non-local semiconductors. When medium is activated by photo-energy because of high temperatures, an optical-elastic-thermal-diffusion (OETD) process occurs described this mathematical-physical model. A study conducted on impact Hall current brought collapse strong magnetic field exterior semiconductor medium. effect field’s density flux. The Laplace transform with initial conditions dimensionless main physical fields one dimension (1D) used to demonstrate this. Mathematically, domain, generic linear solutions strain temperature distributions, as well charge carrier electrons, are derived. key fields’ complete time domain obtained numerically simulating few thermal, mechanical, optical at free surface using inverse approximation technique. For silicon material, photo-thermoelasticity theory’s effect, parameter, effects thermal relaxation durations graphically displayed analyzed.