Growth of High Quality Al Film by MOCVD.

Doping of high-Al-content AlGaN grown by MOCVD

................................................................................................................................... iii Populärvetenskaplig sammanfattning .................................................................................... v Preface ......................................................................................................................................

High Quality YBa2Cu3O7-x Superconducting Thin Films Grown by MOCVD

YBCO thin films have been grown by Metal Organic Chemical Vapour Deposition in ;I cold wall type reactor. The 0-diketonates of yttrium, barium and copper are used as precursors. Filrna have bcen deposited on (001 I MgO and (012) LaA103 single crystalline substrates. The morphology is very dependant on thc gas p h a x composition. Different oxygen partial pressures have been investigated. An inc...

Growth of Ga-doped ZnO thin film prepared by MOCVD for TCO application

The group-III elements, such as Al, Ga and In, are possible dopants for ZnO to improve the electric conductivity of ZnO thin film. Since Ga has lower cost than In and has higher oxidation resistance than Al, it becomes the preferred dopants for ZnO thin film for transparent conducting oxide (TCO) application. In the research, we used MOCVD method with Ga doping to prepare the Ga-doped ZnO thin ...

MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation

High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was r...

MOCVD growth of GaN-based high electron mobility transistor structures