Graphene/h-BN Heterostructures: Graphene/h-BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications (Adv. Energy Mater. 17/2016)
نویسندگان
چکیده
منابع مشابه
Graphene-BN Heterostructures: An In-Plane Transistor
Graphene-Boron Nitride (G-BN) heterostructures can lead to the realization of nanoscale electronics that will be smaller than the dimensional limit—14 nanometers—of silicon transistors and provide higher mobilities. However, the grapheneboron nitride heterostructure although self-insulating, cannot function as a transistor alone due to not having a second conducting pathway. Thus, the utilizati...
متن کاملInterlayer Potential for Graphene/h-BN Heterostructures.
We present a new force-field potential that describes the interlayer interactions in heterojunctions based on graphene and hexagonal boron nitride (h-BN). The potential consists of a long-range attractive term and a short-range anisotropic repulsive term. Its parameters are calibrated against reference binding and sliding energy profiles for a set of finite dimer systems and the periodic graphe...
متن کاملTunable band gaps in bilayer graphene-BN heterostructures.
We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening....
متن کاملVibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.
Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quali...
متن کاملInter-Layer Potential for Graphene/h-BN Heterostructures Supplementary Information
As described in the main text the force-field parameterization has been performed using the tier-2 basis set, 1 as implemented in the FHI-AIMS suite of programs, 2 with tight convergence settings. This basis set is known to introduce minor basis set superposition errors (BSSE) in dimer calculations. 3, 4 In order to estimate the BSSE in the present case, we have performed counterpoise (CP) 5, 6...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Energy Materials
سال: 2016
ISSN: 1614-6832
DOI: 10.1002/aenm.201670102