منابع مشابه
Rectification in Graphene Self-Switching Nanodiode Using Side Gates Doping
The electrical properties and rectification behavior of the graphene self-switching diodes by side gates doping with nitrogen and boron atoms were investigated using density functional tight-binding method. The devices gates doping changes the electrical conductivity of the side gates and the semiconductor channel nanoribbons. As a result, the threshold voltage value under the forward bias is s...
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R. Reiter1,∗, U. Derra, S. Birner, B. Terrés, F. Libisch, J. Burgdörfer and C. Stampfer 1 Institute for Theoretical Physics, Vienna University of Technology, 1040 Wien, Austria, EU 2 JARA-FIT and II. Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany, EU 3 Walter Schottky Institute, Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany 4 D...
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T. Low,1,2 F. Guinea,3 and M. I. Katsnelson4 1IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA 2Network for Computational Nanoelectronics, Purdue University, West Lafayette, Indiana 47907, USA 3Instituto de Ciencia de Materiales de Madrid. CSIC. Sor Juana Inés de la Cruz 3. ES-28049 Madrid. Spain 4Radboud University Nijmegen, Institute for Molecules and Materials, Heyenda...
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ژورنال
عنوان ژورنال: Nature Nanotechnology
سال: 2008
ISSN: 1748-3387,1748-3395
DOI: 10.1038/nnano.2008.22