Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
نویسندگان
چکیده
منابع مشابه
Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm.
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wa...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2016
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/28/8/085302