Global strain-induced scalar potential in graphene devices
نویسندگان
چکیده
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of material. In graphene, one major effects such distortion an energy shift Dirac point, often described as scalar potential. We demonstrate how potential can be generated systematically over entire device resulting changes in graphene work function detected transport experiments. Combined with Raman spectroscopy, we obtain characteristic consistent recent theoretical estimates. This direct evidence for on macroscopic scale due deterministically strain paves way engineering similar materials by using external strain.
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Alexander L. Kitt,1,* Vitor M. Pereira,2,† Anna K. Swan,1,3,4,‡ and Bennett B. Goldberg1,4,5,§ 1Department of Physics, Boston University, 590 Commonwealth Ave, Boston, Massachusetts 02215, USA 2Graphene Research Center and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 3Department of Electrical and Computer Engineering, Boston University, 8 St Mary’...
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ژورنال
عنوان ژورنال: Communications physics
سال: 2021
ISSN: ['2399-3650']
DOI: https://doi.org/10.1038/s42005-021-00651-y