Особенности фотоэлектронных спектров Ge, имплантированного ионами Na-=SUP=-+-=/SUP=-
نویسندگان
چکیده
Using the methods of Auger electron and photoelectron spectroscopy light absorption spectroscopy, composition, densities state electrons in valence band, parameters energy bands Ge (111) implanted with Na+ ions an E0 = 0.5 keV at a dose D Dsat 6·1016 cm-2 thin layer NaGe2 obtained by heating ion-implanted Ge. It is shown that narrow n-type band (~0.2 eV) appears spectrum after ion implantation near bottom conduction which explained presence large number unbound Na atoms ion-doped layer. nanofilms gap ~0.45 eV was for first time
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/pjtf.2023.01.54054.19311