Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs
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چکیده
منابع مشابه
Gate recess engineering of pseudomorphic In/sub 0.30/GaAs/GaAs HEMTs - Electronics Letters
and a 15011s time constant. These pulses are applied on the collector of the simulated devices, while their emitter and substrate are grounded. The thermal boundary condition is considered to be a constant temperature of 300K at the bottom of the simulation domain which corresponds to the substrate electrode. Fig. 2 shows the calculated transient voltage responses of the two transistors submitt...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1996
ISSN: 0013-5194
DOI: 10.1049/el:19960489