Gate-Extension Overlap Control by Sb Tilt Implantation

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Gate-Extension Overlap Control by Sb Tilt Implantation

Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects. key words: MOSFET, extension, gate, overlap, tilt implantation...

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a nested-splicing by overlap extension pcr improves specificity of this standard method

background: splicing by overlap extension (soe) pcr is used to create mutation in the coding sequence of an enzyme in order to study the role of specific residues in protein’s structure and function.objectives: we introduced a nested-soe-pcr (n –soe-pcr) in order to increase the specificity and generating mutations in a gene by soe-pcr.  materials and methods: genomic dna from bacillus thermoca...

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ژورنال

عنوان ژورنال: IEICE Transactions on Electronics

سال: 2007

ISSN: 0916-8524,1745-1353

DOI: 10.1093/ietele/e90-c.5.973