GaN field-effect transistor with efficient heat dissipation on Si substrate
نویسندگان
چکیده
A simple design of a GaN field-effect transistor on Si substrate with efficient heat removal through polydiamond layers formed the walls grounding holes is proposed. According to calculations, as result introduction such sink same average distance between gate sections, maximum temperature in channel decreases significantly and becomes comparable SiC substrate.. Keywords: FET, ground hole, temperature, polydiamond.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2023.01.55349.19327