Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting
نویسندگان
چکیده
منابع مشابه
Direction Dependent Electrical and Optical Properties of Gallium Nitride Nanowires
Gallium Nitride (GaN) nanowires were synthesized in two distinct directions <10-10> adirection and <0001> c-direction in a controlled manner using direct nitridation schemes. Field effect transistors based on individual GaN nanowires have been fabricated using the synthesized ‘a’ and ‘c’ direction nanowires. Gate dependent electrical transport measurements performed on the a-direction nanowires...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2015
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2015/478375