GAIN IMPROVEMENT OF TWO STAGE OPAMP THROUGH BODY BIAS IN 45NM CMOS TECHNOLOGY
نویسندگان
چکیده
منابع مشابه
Intel’s 45nm CMOS Technology
For the 45nm technology node, high-k+metal gate transistors have been introduced for the first time in a high-volume manufacturing process [1]. The introduction of a high-k gate dielectric enabled a 0.7x reduction in Tox while reducing gate leakage 1000x for the PMOS and 25x for the NMOS transistors. Dual-band edge workfunction metal gates were introduced, eliminating polysilicon gate depletion...
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ژورنال
عنوان ژورنال: International Journal of Research in Engineering and Technology
سال: 2014
ISSN: 2321-7308,2319-1163
DOI: 10.15623/ijret.2014.0304168