Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio
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چکیده
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2018
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2018.2872017