Formation of Mn<SUB>2</SUB>Ga<SUB>5</SUB> Phase in Amorphous Mn<SUB>30</SUB>Ga<SUB>70</SUB> Thin Films

Formation and structure of V-Zr amorphous alloy thin films

Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering...

Stress-induced formation of high-density amorphous carbon thin films

Amorphous carbon films with high sp content were deposited by magnetron sputtering and intense argon ion plating. Above a compressive stress of 13 GPa a strong increase of the density of the carbon films is observed. We explain the increase of density by a stress-induced phase transition of sp configured carbon to sp configured carbon. Preferential sputtering of the sp component in the carbon f...

FORMATION OF THE YBa2Cu2NbOy PHASE IN THIN FILMS (POSTPRINT)

Nitrogen doping of amorphous carbon thin films

Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...

Photoinduced doping of thin amorphous WO, films

During cxposurc of thin amorphous WO, films to UV light, both the optical absorptivity and thc electrical conductibity increase, Using optically excited surface plasmons. we were ablc to mcnsure even subtle changes of the absorpt~vity of 10 ntn thtck films simuFtaneously with their electrical resistivity a t varivus temperatuscs. Our measurements show that the temperature dependence and thc dcp...