Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs
نویسندگان
چکیده
منابع مشابه
Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs
Floating body and hot carrier effects are thoroughly investigated in deep submicron Nand Pchannel ultra-thin film SO1 MOSFETs for a wide temperature range. A strong reduction of the parasitic bipolar transistor is obtained with decreasing the temperature (at 77K) and with a grounded substrate. However, the action of the PBT is not completely suppressed even at 77K with a body terminal. Substant...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1996
ISSN: 1155-4339
DOI: 10.1051/jp4:1996307