First-principles calculations of indirect Auger recombination in nitride semiconductors
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چکیده
منابع مشابه
Auger Recombination in GaAs from First Principles
Auger recombination is a significant loss mechanism in many optoelectronic devices. We use first-principles methods based on density functional theory to study the relative importance of direct and indirect phonon-assisted Auger recombination in GaAs and related alloys. Energy and momentum of the recombining electron−hole pair can be transferred to an Auger electron (eeh process) or an Auger ho...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2015
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.92.035207