First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
نویسندگان
چکیده
منابع مشابه
Investigation of the Performance of Carbon Nanotube and Silicon Nanowire Junctionless Transistors using First–Principle Calculations
In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Co...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nanotechnology
سال: 2013
ISSN: 1536-125X,1941-0085
DOI: 10.1109/tnano.2013.2279424