FIR Magnetooptical Measurements on MOCVD Grown InAs

Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

Spin lifetime in InAs epitaxial layers grown on GaAs

We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range from 77 K to 290 K. InAs is known to have a surface accumulation layer and the depth profile of the concentration and mobility is strongly nonuniform. We have correlated the spin relaxation with a multilayer analysis of the transport properties and find that the surface and the interface with the G...

Incoherent interface of InAs grown directly on GaP(001)

We report molecular beam epitaxial growth of InAs on GaP~001!, which has the largest lattice mismatch ~11%! among all the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize the growth and characterize the epilayer. It is found that the growth mode can be controlled by the surface V/III ratio: three-dim...

Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN

Optical and structural properties of in situ Cu doped GaN thin films grown on sapphire substrates were optically investigated by means of Raman, photoluminescence (PL), and absorption spectroscopy. Different Cu concentrations in the films were analyzed by secondary ion mass spectroscopy (SIMS) and found to vary from 2x10 cm to 5x10 cm. Raman studies confirmed high crystalline quality of GaN:Cu ...

AlxGa1-xAs/AlyGa1-yAs VISIBLE LASERS GROWN BY MOCVD

AlGaAs/AlGaAs double-heterostructure (DH) visible lasers with low threshold current densities have been grown by metalorganic chemical vapor deposition (MOCVD). Proton-isolated narrow stripe visible lasers have good performance and uniformity of the characteristics over the whole wafer is excellent. Contamination of the undoped AlGaAs depends on the partial pressure ratio of V element to 111 el...