Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors

High-voltage field effect transistors with wide-bandgap -Ga2O3 nanomembranes

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...

High-voltage field effect transistors with wide-bandgap b-Ga2O3 nanomembranes

nanomembranes Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, and Debdeep Jena Department of Materials Engineering, Korea Aerospace University, Gyeonggi, 412791, South Korea Department of Electrical Engineering, University of Notre Dame,...

Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors

15.4 Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are promising for high-voltage power switching applications. A concern with this new device technology is oxide reliability under prolonged high-field and high-temperature conditions. This paper studies an important aspect of oxide reliability, time-dependent dielectric breakdown (TDDB) in GaN MIS-HEMTs. We have de...

High field breakdown characteristics of carbon nanotube thin film transistors.

The high field properties of carbon nanotube (CNT) network thin film transistors (CN-TFTs) are important for their practical operation, and for understanding their reliability. Using a combination of experimental and computational techniques we show how the channel geometry (length L(C) and width W(C)) and network morphology (average CNT length L(t) and alignment angle distribution θ) affect he...