Field effect on domain wall trapping and domain wall motion in notch free NiFe asymmetric nanorings
نویسندگان
چکیده
منابع مشابه
Domain wall motion in magnetically frustrated nanorings
We describe a magnetically frustrated nanoring (MFNR) configuration which is formed by introducing antiferromagnetic coupling across an interface orthogonal to the ring’s circumferential direction. Such structures have the unique characteristic that only one itinerant domain wall (DW) can exist in the ring, which does not need to be nucleated or injected into the structure and can never escape ...
متن کاملDomain wall motion in nanowires
We investigated the motion of domain walls in ferromagnetic cylindrical nanowires by solving the Landau Lifshitz Gilbert equation numerically for a classical spin model in which energy contributions from exchange, crystalline anisotropy, dipole dipole interactions, and a driving magnetic field are considered. Depending on the diameter, either transverse domain walls or vortex walls are found. A...
متن کاملAsymmetric Response of Ferroelastic Domain-Wall Motion under Applied Bias.
The switching of domains in ferroelectric and multiferroic materials plays a central role in their application to next-generation computer systems, sensing applications, and memory storage. A detailed understanding of the response to electric fields and the switching behavior in the presence of complex domain structures and extrinsic effects (e.g., defects and dislocations) is crucial for the d...
متن کاملInertia-Free Thermally Driven Domain-Wall Motion in Antiferromagnets.
Domain-wall motion in antiferromagnets triggered by thermally induced magnonic spin currents is studied theoretically. It is shown by numerical calculations based on a classical spin model that the wall moves towards the hotter regions, as in ferromagnets. However, for larger driving forces the so-called Walker breakdown-which usually speeds down the wall-is missing. This is due to the fact tha...
متن کاملThe influence of 180° ferroelectric domain wall width on the threshold field for wall motion
for wall motion Samrat Choudhury, Yulan Li, Nozomi Odagawa, Aravind Vasudevarao, L. Tian, Pavel Capek, Volkmar Dierolf, Anna N. Morozovska, Eugene A. Eliseev, Sergei Kalinin, Yasuo Cho, Long-qing Chen, and Venkatraman Gopalan Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA Research Institute of Electrical Communication, Tohoku Universit...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2011
ISSN: 1742-6596
DOI: 10.1088/1742-6596/266/1/012085