Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Abstract Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In specific van heterojunction, the band alignment engineering is crucial and feasible to realize high performance multifunctionality. Here, we design ferroelectric-tuned heterojunction device structure by integrating GeSe/MoS 2 VHJ poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from polarization can effectively modulate of heterojunction. Band transition type II I demonstrated. The combination anisotropic GeSe MoS realizes high-performance polarization-sensitive photodetector exhibiting low dark current approximately 1.5 pA, quick response 14 ?s, detectivity 4.7 × 10 12 Jones. Dichroism ratios are also enhanced in spectrum visible near-infrared. has great potential multifunctional detection applications sophisticated light information sensing. More profoundly, valid band-engineering approach creating versatile