FERROELECTRIC JANUS MONOLAYER APPLICATION

Ferroelectric hexagonal and rhombic monolayer ice phases

Self-Assembly of Hydrofluorinated Janus Graphene Monolayer: A Versatile Route for Designing Novel Janus Nanoscrolls

With remarkably interesting surface activities, two-dimensional Janus materials arouse intensive interests recently in many fields. We demonstrate by molecular dynamic simulations that hydrofluorinated Janus graphene (J-GN) can self-assemble into Janus nanoscroll (J-NS) at room temperature. The van der Waals (vdW) interaction and the coupling of C-H/π/C-F interaction and π/π interaction are pro...

Thin-Film Process Technology for Ferroelectric Application

Recently thin-film ferroelectrics such as Pb(Zr, Ti)O3 (PZT) and (Ba, Sr)TiO3 (BST) have been utilized to form advanced semiconductor and electronic devices including Ferroelectric Ran‐ dom Access memory(FeRAM), actuators composing gyro meters, portable camera modules, and tunable devices for smart phone applications and so on. Processing technology of ferro‐ electric materials is one of the mo...

Janus within Janus

We found a simple and interesting generalization of the non-supersymmetric Janus solution in type IIB string theory. The Janus solution can be thought of as a thick AdSd-sliced domain wall in AdSd+1 space. It turns out that the AdSd-sliced domain wall can support its own AdSd−1-sliced domain wall within it. Indeed this pattern persists further until it reaches the AdS2-slice of the domain wall ...

Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS_{2}.

We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS_{2} between a transistor and a junction state. In the presence of a domain wall, MoS_{2} exhibits rectified I-V characteristics that are well described by the thermionic emission model. The induced Schottky barrier height Φ_{B}^{e...