Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
نویسندگان
چکیده
منابع مشابه
Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders o...
متن کاملEffects of doping and annealing on properties of ZnO films grown by atomic layer deposition
Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue...
متن کاملEffects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition
The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...
متن کاملStructural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition
High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was co...
متن کاملElectrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition
ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2017
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-017-2308-1