Femtosecond laser ablation of wide band-gap materials
نویسندگان
چکیده
منابع مشابه
Generation of color centers by femtosecond laser pulses in wide band gap materials
The high instantaneous powers associated with femtosecond lasers can color many nominally transparent materials. Although the excitations responsible for this defect formation occur on subpicosecond time scales, subsequent interactions between the resulting electronic and lattice defects complicate the evolution of color center formation and decay. These interactions must be understood in order...
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INSTRUCTION Sapphire is widely used in the field of optical components and micromechanical devices owing to its useful mechanical, optical, and electrical properties. However, sapphire is mechanically and chemically difficult to machine because of its high hardness and chemical stability. The difficulty of machining sapphire has restricted the development of advanced device structures. As sapph...
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The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a te...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2012
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.08.084