Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects
نویسندگان
چکیده
منابع مشابه
Total Ionizing Dose (TID) and Displacement Damage (DD) Effects in Integrated Circuits: Recent Results and the Implications for Emerging Technology
Over the last 50 years, the effects of cumulative radiation damage in microelectronics, and now nanoelectronics, have continually presented a design and assurance challenge to space flight missions. Feature sizes, that is, the size of the unit structure in microelectronics, has continually decreased, which has presented an added complexity to testing and assuring microelectronic devices. This p...
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Professor Sokrates T. Pantelides ii ACKNOWLEDGMENTS I would first of all like to thank my husband Pierre who has been supportive and patient with me on my journey of attaining a Ph.D. He believed in me even when I did not believe in myself, he listened countless times to my presentations and helped me perfect them. I would also like to thank my parents and my sister Myriam for everything they h...
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Background: Compared to past decades, humans are exposed to rapidly increasing levels of radiofrequency electromagnetic radiations (RF-EMF). Despite numerous studies, the biological effects of human exposure to different levels of RF-EMF are not fully understood, yet. This study aimed to evaluate the bioeffects of exposure to "900/1800 MHz" and “2.4 GHz" RF-EMFs, and x-rays as well as their pot...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2019
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.2018.2882529