Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics

A thin-film transistor (TFT) is a special type of metal-oxide-semiconductor field-effect (MOSFET) made by coating an insulating substrate with layers active semiconductor layer, metallic contacts, and the dielectric layer. FET transistors consist three main components: source, gate, drain. The objective work to fabricate channel component growing ZnO nanostructure on glass using spin spray pyrolysis methods. Thin films zinc oxide (ZnO) were deposited substrates techniques from precursor solution containing acetate, ethanol hydroxide ammonia. After deposition, centrifuged evaporated. application has been used deposit wide variety thin films, which are in devices, such as solar cells, sensors solid fuel cells. It observed that properties often depend preparation conditions; concentration levels solution, time, electrical optical substrate, etc. average resistance sheet samples F1, F5, F52, F57 was 8.7 Ω, 9.14 8.9 Ω 9.42 samples, F2, F29, F39, F53 9.5 9.3 9.9 10.0 respectively, at growth temperature 3400C. found be highly transparent between visible near-infrared regions electromagnetic spectrum transmission each sample decreases seed decrease confirms layer it. This demonstrated can fabricated local developed locally available materials less harmful chemical reagents acetate. Such optically absorptive inherently transmissive, further suggesting they material film transistors.