Fabrication of Semiconductor Microstructures by Selective Area MOCVD.

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Control over the location, distribution, and size of quantum dots is essential for the engineering of next-generation semiconductor devices employing these remarkable nanostructures. We describe two approaches for achieving some level of this control in the InGaAs/GaAs material system. The first allows a degree of spatial selectivity by using strain differences in patterned InGaAs thin films as...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Fabrication of Microstructures by Powder Blasting

Harry Mulisch, De ontdekking van de hemel.

DIY fabrication of microstructures by projection photolithography

Previous hobbyists have demonstrated fabrication of single macroscale transistors and simple gates in silicon. These experiments, however, have been hampered by the inability to create features much below 1mm in size. This paper presents a simple and affordable projection photolithography technique which can be used to create microstructures using easily obtainable materials. Methods of alignme...

Chiral microstructures (spirals) fabrication by holographic lithography.

We present an optical interference model to create chiral microstructures (spirals) and its realization in photoresist using holographic lithography. The model is based on the interference of six equally-spaced circumpolar linear polarized side beams and a circular polarized central beam. The pitch and separation of the spirals can be varied by changing the angle between the side beams and the ...