Fabrication of High-Quality Josephson Junctions Based on Nb|Al-AlN|NbN
نویسندگان
چکیده
A description of the fabrication technology high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors V g =3.2-3.4 mV, current density up to J 35 kA/cm 2 , quality factor R j /R n (ratio subgap resistance normal-state resistance) 30, junction area 1 μm . The are integrated into NbTiN|SiO |Al microstrip line. Keywords: superconducting devices, superconductor--insulator--superconductor junction, plasma etching.
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ژورنال
عنوان ژورنال: Fizika tverdogo tela
سال: 2022
ISSN: ['0367-3294', '1726-7498']
DOI: https://doi.org/10.21883/pss.2022.10.54222.49hh