Fabrication of High-Density GaN Nanowires through Ammoniating Ga2O3/Nb Films
نویسندگان
چکیده
منابع مشابه
Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition. The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity. AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it...
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GaN nanowires (NWs) were synthesized through a vapor-liquid-solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2 V and output current density of 0.16 µA cm⁻². The measured performance of the GaN NGs was consistent ...
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In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...
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High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission elect...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2008
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.113.723