Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide
نویسندگان
چکیده
منابع مشابه
Macrodefects in cubic silicon carbide crystals
Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal gro...
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We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.25 - 1.6 μm. Finally, we ...
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ژورنال
عنوان ژورنال: Micromachines
سال: 2019
ISSN: 2072-666X
DOI: 10.3390/mi10070430