Fabrication and characterization of green light emitting diode

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flex...

Development of High Power Green Light Emitting Diode Chips

The development of high emission power green light emitting diodes chips using GaInN/GaN multi quantum well heterostructures on sapphire substrate in our group is being reviewed. We analyze the electronic bandstructure in highly polarized GaInN/GaN quantum wells to identify the appropriate device structures. We describe the optimization of the epitaxial growth for highest device performance. Ap...

Josephson light-emitting diode.

We consider an optical quantum dot where an electron level and a hole level are coupled to respective superconducting leads. We find that electrons and holes recombine producing photons at discrete energies as well as a continuous tail. Further, the spectral lines directly probe the induced superconducting correlations on the dot. At energies close to the applied bias voltage eV(sd), a paramete...

Fabrication and Characterization of Resonant Cavity Light-emitting Transistors By

Fabrication and Characterization of Organic Light Emitting Devices

By using Indium tin oxide (ITO) as anode material and NPB and Alq3 as hole transport layer(HTL) and electron transport layer(ETL) respectively, a Organic Light Emitting Device (OLED) with emitted wavelength of (525 ± 20) nm is produced. Aluminium (Al) is used as a cathode. The calculated emission energy is 2.37 ± 0.12 eV compared to theoretically 2.8 eV from the band gap in Alq3. This shifting ...